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參數(shù)資料
| 型號： | MTP8N50E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM |
| 中文描述： | 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 158K |
| 代理商： | MTP8N50E |
1
Motorola, Inc. 1996
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. This new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters, PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
500
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M )
Gate–to–Source Voltage – Continuous
Gate–to–Source Voltage
– Non–repetitive (tp
≤
10 ms)
500
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous @ TC = 25
°
C
Drain Current
— Continuous @ TC = 100
°
C
Drain Current
— Single Pulse (tp
≤
10 s)
ID
ID
IDM
8.0
5.0
32
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
125
1.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 8.0 Apk, L = 16 mH, RG = 25 )
510
mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
RJC
RJA
1.0
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 5 sec.
TL
260
°
C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 2
Order this document
by MTP8N50E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
8.0 AMPERES
500 VOLTS
RDS(on) = 0.8 OHM
D
S
G
CASE 221A–06, Style 5
TO-220AB
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