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| 型號： | MTP6P20E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 96K |
| 代理商： | MTP6P20E |
MTP6P20E
http://onsemi.com
6
SAFE OPERATING AREA
1.0E-05
1.0E-04
1.0E-02
0.1
1.0
0.01
1.0E-03
1.0E-01
1.0E+00
1.0E+01
0.05
0.01
SINGLE PULSE
0.02
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN-T
O-SOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1.0
100
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
144
72
36
ID = 6.0 A
108
10
1.0
100
150
t,TIME (s)
Figure 13. Thermal Response
r(t)
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
10 ms
1 ms
dc
100 s
0.1
D = 0.5
0.2
180
0.01
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