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參數(shù)資料
| 型號： | MTP6P20E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 96K |
| 代理商： | MTP6P20E |
MTP6P20E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = -55°C
25°C
100°C
25°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 3.0 A
7 V
8 V
6 V
5 V
15 V
125°C
100°C
TJ = 100°C
-55°C
12
4
8
0
16
14
12
10
8
6
4
2
0
9
7
5
3
1
12
10
6
8
0
8
6
4
2
0
1.4
10
1.2
1.0
0.8
2.0
1.6
1.2
0
8
6
4
2
012
10
0.8
0.4
-160
-200
1000
100
10
1
-120
-80
-40
0
050
-50
1.0
0.5
0
150
100
125
25
-25
75
2.0
1.5
2
4
12
9 V
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