參數(shù)資料
型號: MTP75N03HDL
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 191K
代理商: MTP75N03HDL
Semiconductor Components Industries, LLC, 2000
September, 2004 Rev. XXX
1
Publication Order Number:
MTP75N03HDL/D
MTP75N03HDL
Preferred Device
Power MOSFET
75 Amps, 25 Volts, Logic Level
NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
lowvoltage, highspeed switching applications in power supplies,
converters and PWM motor controls, and inductive loads. The
avalanche energy capability is specified to eliminate the guesswork in
designs where inductive loads are switched, and to offer additional
safety margin against unexpected voltage transients.
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
25
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
25
Vdc
GateSource Voltage
Continuous
Single Pulse (tp ≤ 10 ms)
VGS
± 15
± 20
Vdc
Vpk
Drain Current Continuous
Continuous @ 100
°C
Single Pulse (tp ≤ 10 s)
ID
IDM
75
59
225
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
150
1.0
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 75 Apk, L = 0.1 mH, RG = 25 )
EAS
280
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
RθJC
RθJA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
75 AMPERES
25 VOLTS
RDS(on) = 9 m
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP75N03HDL
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP75N03HDL = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP75N03HDL
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
相關(guān)PDF資料
PDF描述
MTP7N20 7 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP7P05 7 A, 50 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP8N10 8 A, 100 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP8N08 8 A, 80 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP8N50E 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTP75N05HD 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 75 Amps, 50 Volts
MTP75N06HD 制造商:ON Semiconductor 功能描述:
MTP75S 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 75A
MTP786K050P1C 功能描述:鉭質(zhì)電容器-濕式 78uF 50V 10% "C" RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫存號:T4 Case 外殼直徑:9.52 mm 外殼長度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk
MTP786M050P1C 制造商:Mallory Sonalert Products Inc 功能描述: