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參數(shù)資料
| 型號(hào)： | MTP6N60 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | JFETs |
| 英文描述： | 6.8 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 320K |
| 代理商： | MTP6N60 |
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ < 1%)
6.8
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, ID = IAR, VDD = 25 V)
460
mJ
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max,
δ < 1%)
21
mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100
oC, pulse width limited by Tj max,
δ < 1%)
4.2
A
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
A
VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating x 0.8
Tc = 125
oC
25
250
A
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 20 V
± 100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS = VGS
ID = 1 mA
2
3.1
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V
ID = 3 A
1
1.2
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max
VGS = 10 V
6.8
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
)Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID = 3 A
2
4.8
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0
1150
160
75
1500
240
110
pF
MTP6N60
2/9
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