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| 型號： | MTP50P03HDL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 50 Amps, 30 Volts, Logic Level(50A,30V,TO220,P溝道功率MOSFET) |
| 中文描述： | 50 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 73K |
| 代理商： | MTP50P03HDL |
MTP50P03HDL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
(C
pk
≥
2.0) (Note 3)
V
(BR)DSS
30
-
-
26
-
-
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
-
-
-
-
1.0
10
Adc
Gate-Body Leakage Current
(V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1)
I
GSS
-
-
100
nAdc
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
(C
pk
≥
3.0) (Note 3)
V
GS(th)
1.0
-
1.5
4.0
2.0
-
Vdc
mV/
°
C
Static Drain-to-Source On-Resistance
(V
GS
= 5.0 Vdc, I
D
= 25 Adc)
(C
pk
≥
3.0) (Note 3)
R
DS(on)
-
0.020
0.025
Ohm
Drain-to-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 50 Adc)
(I
D
= 25 Adc, T
J
= 125
°
C)
V
DS(on)
-
-
0.83
-
1.5
1.3
Vdc
Forward Transconductance
(V
DS
= 5.0 Vdc, I
D
= 25 Adc)
DYNAMIC CHARACTERISTICS
g
FS
15
20
-
mhos
Input Capacitance
(V
DS
= 25 Vd
= 0 Vd
f = 1.0 MHz)
V
C
iss
C
oss
C
rss
-
3500
4900
pF
Output Capacitance
-
1550
2170
Transfer Capacitance
-
550
770
SWITCHING CHARACTERISTICS
(Note 2)
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q
3
-
22
30
ns
Rise Time
(V
DD
= 15 Vdc, I
D
= 50 Adc,
= 5 0 Vdc
V
GS
= 5.0 Vdc,
= 2.3 )
R
G
2.3 )
-
340
466
Turn-Off Delay Time
-
90
117
Fall Time
-
218
300
Gate Charge
(See Figure 8)
-
74
100
nC
(V
DS
= 24 Vdc, I
D
= 50 Adc,
V
GS
= 5.0 Vdc)
-
13.6
-
-
44.8
-
-
35
-
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I
S
=50 Adc, V
GS
= 0 Vdc)
(I
S
= 50 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
-
-
2.39
1.84
3.0
-
Vdc
Reverse Recovery Time
(See Figure 15)
t
rr
t
a
t
b
-
106
-
ns
(I
= 50 Adc, V
= 0 Vdc,
S
dI
S
/dt = 100 A/ s)
-
58
-
-
48
-
Reverse Recovery Stored Charge
Q
RR
-
0.246
-
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
L
D
-
-
3.5
4.5
-
-
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values. C
pk
=
3 x SIGMA
L
S
-
7.5
-
nH
Max limit - Typ
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTP50P03HDLG | 功能描述:MOSFET PFET T0220 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP50P03HDLG | 制造商:ON Semiconductor 功能描述:MOSFET P TO-220 |
| MTP50S | 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 50A |
| MTP50W | 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Glass Passivated Triple-Phase Bridge Rectifier, 50A |
| MTP5210F3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-Channel Enhancement Mode Power MOSFET |
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