參數(shù)資料
型號(hào)： MTP4N80E
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-06, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 110K
代理商： MTP4N80E
MTP4N80E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
800
—
1.02
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 800 Vdc, VGS = 0 Vdc)
(VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.0
4.0
—
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
—
1.95
3.0
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 4.0 Adc)
(ID = 2.0 Adc, TJ = 125°C)
VDS(on)
—
8.24
—
12
10
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc)
gFS
2.0
4.3
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
—
1320
2030
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
187
400
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
72
160
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
td(on)
—
13
30
ns
Rise Time
(VDD = 400 Vdc, ID = 4.0 Adc,
VGS = 10 Vdc
tr
—
36
90
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
40
80
Fall Time
RG
9.1
)
tf
—
30
75
Gate Charge
(S
Fi
8)
QT
—
36
80
nC
(See Figure 8)
(VDS = 400 Vdc, ID = 4.0 Adc,
Q1
—
7.0
—
(VDS
400 Vdc, ID
4.0 Adc,
VGS = 10 Vdc)
Q2
—
16.5
—
Q3
—
12
—
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (1)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.812
0.7
1.5
—
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
—
557
—
ns
(See Figure 14)
(IS = 4.0 Adc, VGS = 0 Vdc,
ta
—
100
—
(IS
4.0 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s)
tb
—
457
—
Reverse Recovery Stored Charge
QRR
—
2.33
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料
PDF描述
MTP50N03HDL 50 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP50N06EU 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP50N06EN 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP50N06E16 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP10N10EWC 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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