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| 型號(hào)： | MTP40N10E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | MTP40N10E |
MTP40N10E
http://onsemi.com
6
SAFE OPERATING AREA
100 ms
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN-T
O-SOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1.0
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
ID = 40 A
100
t, TIME (seconds)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1000
1.0
0
800
600
500
400
700
100
10
300
200
100
0.01
0.1
1.0
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0 ms
10 ms
dc
10 ms
D = 0.5
0.2
0.1
SINGLE PULSE
0.05
0.02
0.0
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