參數(shù)資料
型號(hào)： MTP36N06V
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 6/7頁
文件大?。?/td> 202K
代理商： MTP36N06V
MTP36N06V
http://onsemi.com
6
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
10
100
1000
1
dc
100 μs
1 ms
10 ms
10 μs
t, TIME (s)
1.00
0.10
0.01
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.02
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
AV
ALANCHE
ENERGY
(mJ)
25
50
75
100
125
ID = 32 A
150
0
175
50
25
225
75
100
125
150
200
175
相關(guān)PDF資料
PDF描述
MTP3N08L 3 A, 80 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N10L 3 A, 100 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N120E 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N40 3 A, 400 V, 3.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N45 3 A, 450 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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