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參數(shù)資料
| 型號(hào)： | MTP36N06V |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 202K |
| 代理商： | MTP36N06V |
MTP36N06V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
61
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150 °C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.6
6.0
4.0
Vdc
mV/°C
Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 16 Adc)
RDS(on)
0.034
0.04
Ohm
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 32 Adc)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 150 °C)
VDS(on)
1.25
1.54
1.47
Vdc
Forward Transconductance (VDS = 7.6 Vdc, ID = 16 Adc)
gFS
5.0
7.83
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1220
1700
pF
Output Capacitance
Coss
337
470
Reverse Transfer Capacitance
Crss
74.8
150
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 32 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
14
30
ns
Rise Time
tr
138
270
TurnOff Delay Time
td(off)
54
100
Fall Time
tf
91
180
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
QT
39
50
nC
Q1
7.0
Q2
17
Q3
13
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 32 Adc, VGS = 0 Vdc)
(IS = 32 Adc, VGS = 0 Vdc,
TJ = 150 °C)
VSD
1.03
0.94
2.0
Vdc
Reverse Recovery Time
(IS = 32 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
92
ns
ta
64
tb
28
Reverse Recovery Stored
Charge
QRR
0.332
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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