參數(shù)資料
型號： MTP36N06V
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 3/7頁
文件大?。?/td> 202K
代理商： MTP36N06V
MTP36N06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
01
2
3
0
18
72
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
13
5
7
9
0
18
54
72
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
018
36
72
0.02
0.06
0.04
0.1
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
036
54
72
0.028
0.036
0.044
0.052
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0
1020
4050
60
10
100
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
9 V
8 V
6 V
5 V
7 V
VGS = 10 V
TJ = 100°C
25°C
55°C
25°C
TJ = 25°C
VGS = 10 V
15 V
VGS = 0 V
TJ = 125°C
36
54
4
36
54
18
30
VDS ≥ 10 V
TJ = 100°C
55°C
4 V
2
46
8
0.08
0
1000
1
100°C
25°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
50
0.6
0.8
1.2
1.6
1.8
TJ, JUNCTION TEMPERATURE (°C)
25
0
25
50
75
100
125
150
VGS = 10 V
ID = 16 A
1
1.4
175
相關(guān)PDF資料
PDF描述
MTP3N08L 3 A, 80 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N10L 3 A, 100 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N120E 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N40 3 A, 400 V, 3.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N45 3 A, 450 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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