參數(shù)資料
型號： MTP1N100E
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 6/8頁
文件大?。?/td> 203K
代理商： MTP1N100E
MTP1N100E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
0.1
1.0
1000
10
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
100
1.0
10
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
0.1
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
25
150
0
1.0E–05
1.0E–04
0.1
1.0
0.01
1.0E–03
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
50
VGS = 20 V
SINGLE PULSE
TC = 25°C
50
100
125
75
40
30
20
10
ID = 1 A
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0E–02
1.0E–01
1.0E+00
1.0E+01
10
s
100
s
1 ms
10 ms
dc
相關PDF資料
PDF描述
MTP1N60E 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP20N06V 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP20N10E 20 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP25N05E 25 A, 50 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP25N10 25 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關代理商/技術參數(shù)
參數(shù)描述
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