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| 型號(hào)： | MTP15N06VL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | MTP15N06VL |
MTP15N06VL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
02
4
6
8
10
0
10
20
30
35
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
9
23
4
8
0
10
20
30
35
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
010
20
30
5
0
0.02
0.04
0.06
0.12
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
010
20
30
40
0
5
10
100
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 125°C
100°C
TJ = 25°C
VDS ≥ 5 V
TJ = -55°C
25°C
100°C
TJ = 100°C
25°C
-55°C
VGS = 0 V
VGS = 10V
VGS = 5 V
40
5
7 V
6 V
5 V
8 V
9 V
40
5
56
7
0.08
0.1
35
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
010
20
30
40
35
0.04
0.08
ID, DRAIN CURRENT (AMPS)
10 V
TJ = 25°C
VGS = 5 V
0.06
5
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
-50
0.2
0.4
0.6
0.8
2.0
TJ, JUNCTION TEMPERATURE (°C)
-25
0
25
50
75
100
150
VGS = 5 V
ID = 7.5 A
1
1.4
1.6
1.8
125
175
13
57
9
15
25
15
25
0.14
15
25
0.1
15
25
45
50
45
50
1
0
0.12
0.14
0.16
0.02
0
45
50
1.2
15
25
45
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