參數(shù)資料
型號: MTP15N06VL
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 81K
代理商: MTP15N06VL
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
1
Publication Order Number:
MTP15N06VL/D
MTP15N06VL
Preferred Device
Power MOSFET
15 Amps, 60 Volts, Logic Level
N–Channel TO–220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 10 ms)
VGS
VGSM
± 15
± 25
Vdc
Vpk
Drain Current – Continuous
Drain Current – Continuous @ 100
°C
Drain Current – Single Pulse (tp ≤ 10 s)
ID
IDM
15
12
53
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
60
0.40
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak
IL = 15 Apk, L = 1.0 mH, RG = 25 )
EAS
113
mJ
Thermal Resistance – Junction to Case
Thermal Resistance – Junction to Ambient
R
θJC
R
θJA
2.5
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
15 AMPERES
60 VOLTS
RDS(on) = 85 m
Device
Package
Shipping
ORDERING INFORMATION
MTP15N06VL
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP15N06VL
= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP15N06VL
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
Preferred devices are recommended choices for future use
and best overall value.
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