- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96096 > MTP1306 (ON SEMICONDUCTOR) 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號(hào)： | MTP1306 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 199K |
| 代理商： | MTP1306 |
MTP1306
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
30
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
1.0
1.5
2.0
Vdc
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 38 Adc)
(VGS = 5.0 Vdc, ID = 38 Adc)
RDS(on)
5.8
7.4
6.5
8.5
m
W
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C)
VDS(on)
0.44
0.5
0.38
Vdc
Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc)
gFS
15
55
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
2560
3584
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
1305
1827
Transfer Capacitance
f = 1.0 MHz)
Crss
386
772
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
17
35
ns
Rise Time
(VDD = 15 Vdc, ID = 75 Adc,
VGS =50Vdc
tr
170
340
TurnOff Delay Time
VGS = 5.0 Vdc,
RG = 4.7 )
td(off)
68
136
Fall Time
RG
4.7
)
tf
145
290
Gate Charge
QT
50
70
nC
(VDS = 24 Vdc, ID = 75 Adc,
Q1
8.3
(VDS
24 Vdc, ID
75 Adc,
VGS = 5.0 Vdc)
Q2
25.3
Q3
17.2
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.75
0.64
1.1
Vdc
Reverse Recovery Time
trr
84
ns
(I =20Adc V
= 0 Vdc
ta
35
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
53
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
0.13
C
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP15N06E | 15 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP15N06LFI | 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTP15N06VL | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP15N06 | 15 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP15N08L | 15 A, 80 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP1403BQ8 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| MTP14N05L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| MTP150 | 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 150A |
| MTP156K00691D | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Wet Tantalum Capacitors Subminiature, Axial Leads |
| MTP156M00691D | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Wet Tantalum Capacitors Subminiature, Axial Leads |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。