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參數(shù)資料
| 型號： | MTP1306 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 199K |
| 代理商： | MTP1306 |
Semiconductor Components Industries, LLC, 2000
September, 2004 Rev. XXX
1
Publication Order Number:
MTP1306/D
MTP1306
Preferred Device
Power MOSFET
75 Amps, 30 Volts
NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating area are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
Vdc
Vpk
Drain Current
Continuous
Continuous @ 100
°C
Single Pulse (tp ≤ 10 s)
ID
IDM
75
59
225
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
150
1.2
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 75 Apk, L = 0.1 mH, RG = 25 )
EAS
280
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
RθJC
RθJA
0.8
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from Case for 5.0
seconds
TL
260
°C
75 AMPERES
30 VOLTS
RDS(on) = 6.5 m
Device
Package
Shipping
ORDERING INFORMATION
MTP1306
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP1306
= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP1306
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
Preferred devices are recommended choices for future use
and best overall value.
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