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參數(shù)資料
| 型號： | MTP12N10E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-06, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 204K |
| 代理商： | MTP12N10E |
MTP12N10E
http://onsemi.com
5
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 8. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 9. Maximum Rated Switching
Safe Operating Area
0
20
40
60
80
100
Figure 10. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
0
30
40
0.1
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1
10
1000
0.1
dc
100
s
1 ms
10 ms
20
10
RθJC(t) = r(t) RθJC
RθJC = 1.9°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
t, TIME (ms)
1
0.01
D = 0.5
0.05
0.01
SINGLE PULSE
0.01
0.02
12
100
TJ ≤ 175°C
0.03
0.02
0.05
0.1
0.2
0.3
0.5
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
10
OPERATION LIMITED IN THIS
AREA BY RDS(on)
0.1
0.2
COMMUTATING SAFE OPERATING AREA (CSOA)
The Commutating Safe Operating Area (CSOA) of Figure
12 defines the limits of safe operation for commutated
source-drain current versus re-applied drain voltage when
the source-drain diode has undergone forward bias. The
curve shows the limitations of IFM and peak VDS for a given
rate of change of source current. It is applicable when
waveforms similar to those of Figure 11 are present. Full or
half-bridge PWM DC motor controllers are common
applications requiring CSOA data.
Device stresses increase with increasing rate of change
of source current so dIs/dt is specified with a maximum
value. Higher values of dIs/dt require an appropriate
derating of IFM, peak VDS or both. Ultimately dIs/dt is limited
primarily by device, package, and circuit impedances.
Maximum device stress occurs during trr as the diode goes
from conduction to reverse blocking.
VDS(pk) is the peak draintosource voltage that the
device must sustain during commutation; IFM is the
maximum forward source-drain diode current just prior to
the onset of commutation.
VR is specified at rated BVDSS to ensure that the CSOA
stress is maximized as IS decays from IRM to zero.
RGS should be minimized during commutation. TJ has
only a second order effect on CSOA.
Stray inductances in Motorola’s test circuit are assumed
to be practical minimums.
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相關(guān)代理商/技術(shù)參數(shù) |
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| MTP12N18 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 150-200 V |
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| MTP12P10 | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP12P10G | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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