參數(shù)資料
型號(hào)： MTP12N10E
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-06, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 204K
代理商： MTP12N10E
MTP12N10E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0, ID = 250 Adc)
Temperature Coefficient (positive)
V(BR)DSS
100
—
110
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 100 V, VGS = 0)°
(VDS = 100 V, VGS = 0, TJ = 150°C)
IDSS
—
10
100
A
GateBody Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
—
100
nAdc
GateBody Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
—
100
nAdc
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (negative)
VGS(th)
2.0
—
3.0
6.0
4.0
—
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 6.0 Adc)
RDS(on)
—
0.125
0.16
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 12 Adc)°
(ID = 6.0 Adc, TJ = 150°C)
VDS(on)
—
1.5
1.4
2.4
1.92
Vdc
Forward Transconductance (VDS ≥ 15 V, ID = 6.0 A)
g
FS
4.0
5.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0,
Ciss
—
600
—
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
SFi
14
Crss
—
70
—
Output Capacitance
)
See Figure 14
Coss
—
230
—
SWITCHING CHARACTERISTICS (TJ = 100°C)
TurnOn Delay Time
td(on)
—
10
—
ns
Rise Time
(VDD = 50 V, ID = 12 A,
VGS =10V RG =12 )
tr
—
64
—
TurnOff Delay Time
VGS = 10 V, RG = 12 )
See Figure 7
td(off)
—
21
—
Fall Time
See Figure 7
tf
—
30
—
Gate Charge
QT
—
18
26
nC
(VDS = 80 V, ID = 12 A,
VGS = 10 Vdc)
Q1
—
4.0
—
VGS = 10 Vdc)
See Figures 5 and 6
Q2
—
10
—
See Figures 5 and 6
Q3
—
8.0
—
SOURCEDRAIN DIODE CHARACTERISTICS*
Forward OnVoltage
(IS = 12 A, VGS = 0)
VSD
—
1.0
2.5
Vdc
(IS
12 A, VGS
0)
(IS = 12 A, VGS = 0, TJ = 150°C)
—
0.83
—
Reverse Recovery Time
(IS = 12 A, VGS = 0,
dIS/dt = 100 A/s, VR = 50 V)
trr
—
110
—
ns
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
″
(Measured from the drain lead 0.25
″ from package to center of die)
Ld
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
Ls
—
7.5
—
*Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
相關(guān)PDF資料
PDF描述
MTP12N10L 12 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP12N20 12 A, 200 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP12P05 12 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTM12P05 12 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
MTM12P08 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
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參數(shù)描述
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MTP12P10 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTP12P10G 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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