- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96094 > MTM86627 (PANASONIC CORP) 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MTM86627 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, WSSMINI6-F1, 6 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 486K |
| 代理商： | MTM86627 |
MTM86627
2
SJF00085AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
FET
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = –1.0 mA, VGS = 0
–20
V
Drain-source cutoff current
IDSS
VDS = –20 V, VGS = 0
–1.0
m
A
Gate-source cutoff current
IGSS
VGS = ±8 V, VDS = 0
±
10
m
A
Gate threshold voltage
VTH
ID = –1.0 mA, VDS = –10 V
– 0.4
– 0.75
–1.1
V
Drain-source ON resistance *1
RDS(on)
ID = –1.0 A, VGS = –4.0 V
80
120
mW
ID = –1.0 A, VGS = –2.5 V
100
170
ID = – 0.5 A, VGS = –1.8 V
140
230
Forward transfer admittance *1
Yfs ID = –1.0 A, VDS = –10 V, f = 1 MHz
3.0
S
Short-circuit input capacitance (Common source)
Ciss
VDS = –10 V, VGS = 0, f = 1 MHz
300
pF
Short-circuit output capacitance (Common source)
Coss
30
pF
Reverse transfer capacitance (Common source)
Crss
35
pF
Turn-on delay time *2
td(on)
VDD = –10 V, VGS = 0 V to –4 V, ID = –1A
6
ns
Rise time *2
tr
8
ns
Turn-off delay time *2
td(off)
VDD = –10 V, VGS = –4 V to 0 V, ID = –1A
57
ns
Fall time *2
tf
55
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: ton , toff measurement circuit
VCC = 10 V
PW = 10 s
Duty Cycle ≤ 1%
ID = 1.0 A
RL = 10
VOUT
VIN
D
G
S
VIN
50
td(on)
td(off)
0 V
4 V
VIN
VOUT
10%
90%
10%
tr
tf
SBD
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 500 mA
0.42
V
IF = 700 mA
0.45
V
Reverse current
IR
VR = 6 V
90
m
A
VR = 15 V
250
m
A
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTM8N20 | 8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| MTP8N20 | 8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTMF8231 | 18000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTMF8233 | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTP10N06 | 10 A, 60 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTM867270LBF | 功能描述:MOSFET N-CH 20V 2.2A WSSMINI6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MTM8N35 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS |
| MTM8N40 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS |
| MTM8N60 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS |
| MTM8P08 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。