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參數(shù)資料
| 型號： | MTMF8233 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, THIN, SO8-F1-B, 8 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 486K |
| 代理商： | MTMF8233 |
Silicon MOS FETs (Small Signal)
Publication date: October 2009
SJF00112BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTMF8233
Silicon N-channel MOS FET
For lithium-ion secondary battery protection circuit
Overview
The MTMF8233 is designed for the power management application for
notebook computer and Li-ion battery protection circuit.
Features
Low drain-source ON resistance:
RDS(on) = 1.9 m (typ.) (ID = 9.0 A, VGS = 10 V)
Incorporating a built-in gate protection diode
Thin at-lead SO8 package (SO8-F1-B)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
30
V
Gate-source surrender voltage
VGSS
±
20
V
Drain current
ID
20
A
Peak drain current *1
IDP
80
A
Avalanche energy capability *2
EAS
200
mJ
Avalanche current *2
IAS
20
A
Power dissipation *3
PD
1.0
W
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Note) *1: t = 10 ms, Duty cycle < 1%
*2: Avalanche (single pulse)
Conditions: VDD = 24 V, VGS = 10 V to 0 V, L = 0.5 mH, Tch = 25°C
VDD
0
ID
L
D
G
S
Pulse
generator
Avalanche time
VGS
0 V
IAS
VDD
VDS
BVDSS
ID
*3: Mounted on a glass epoxy PC board (25.4 mm × 25.4 mm × 0.8 mm)
Package
Code
SO8-F1-B
Pin Name
1: Source
5: Drain
2: Source
6: Drain
3: Source
7: Drain
4: Gate
8: Drain
Marking Symbol: AC
Internal Connection
4
(G)
(D)
5
1
(S)
2
(S)
3
(S)
(D)
8
(D)
7
(D)
6
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