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參數(shù)資料
| 型號： | MTP12N06EZL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-06, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 109K |
| 代理商： | MTP12N06EZL |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer’s
Data Sheet
TMOS EFET.
High Energy Power FET
NChannel EnhancementMode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and mode and switch efficiently. This new
high energy device also offers a gatetosource zener diode
designed for 4 kV ESD protection (human body model).
ESD Protected
4 kV Human Body Model
400 V Machine Model
Avalanche Energy Capability
Internal SourceToDrain Diode Designed to Replace External
Zener Transient SuppressorAbsorbs High Energy in the
Avalanche Mode
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GateSource Voltage — Continuous
GateSource Voltage — NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
±15
±20
Vdc
Vpk
Drain Current — Continuous
— Continuous @ 100
°C
— Single Pulse (tp ≤ 10 s)
ID
IDM
12
7.1
36
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
45
0.36
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 )
EAS
72
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
2.78
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
EFET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Order this document
by MTP12N06EZL/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MTP12N06EZL
TMOS POWER FET
12 AMPERES
60 VOLTS
RDS(on) = 0.180 OHM
D
S
G
CASE 221A06, Style 5
TO220AB
Motorola, Inc. 1995
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| MTP12N08 | 12 A, 80 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP12N10 | 12 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP12N10ELWC | 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP12N10ELU2 | 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP12N10ELS | 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP12N10E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM |
| MTP12N18 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 150-200 V |
| MTP12N20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 150-200 V |
| MTP12P06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP12P10 | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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