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參數(shù)資料
| 型號(hào)： | MTP12N06EZL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-06, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 109K |
| 代理商： | MTP12N06EZL |
MTP12N06EZL
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
0.06
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
GateSource Breakdown Voltage
(VDS = 0 V, IG = 10 mA)
18
—
Vdc
GateBody Leakage Current
(VGS = ± 10 Vdc, VDS = 0 V, TJ = 25°C)
(VGS = ± 10 Vdc, VDS = 0 V, TJ = 150°C)
IGSS
—
500
100
nAdc
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.5
4.0
2.0
—
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 5.0 Vdc, ID = 6.0 Adc)
RDS(on)
—
0.18
Ohm
DrainSource OnVoltage (VGS = 5.0 Vdc)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 125°C)
VDS(on)
—
2.6
2.3
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 6.0 Adc)
gFS
3.0
6.8
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
—
430
600
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
224
310
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
51
100
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
td(on)
—
70
90
ns
Rise Time
(VDS = 30 Vdc, ID = 12 Adc,
VGS =50Vdc
tr
—
436
540
TurnOff Delay Time
VGS = 5.0 Vdc,
RG = 9.1 )
td(off)
—
158
380
Fall Time
RG
9.1
)
tf
—
186
340
Gate Charge
(S
Fi
8 & 9)
QT
—
10.6
40
nC
(See Figures 8 & 9)
(VDS = 48 Vdc, ID = 12 Adc,
Q1
—
1.4
—
(VDS
48 Vdc, ID
12 Adc,
VGS = 5.0 Vdc)
Q2
—
5.9
—
Q3
—
6.0
—
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (1)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
1.1
1.05
1.4
—
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
—
325
—
ns
(See Figure 14)
(IS = 12 Adc, VGS = 0 Vdc,
ta
—
124
—
(IS
12 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s)
tb
—
201
—
Reverse Recovery Stored Charge
QRR
—
2.013
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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