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參數(shù)資料
| 型號： | MTM76720 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, WSMINI6-F1, 6 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 307K |
| 代理商： | MTM76720 |
MTM76720
2
SJF00091AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
FET
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = 1.0 mA, VGS = 0
20
V
Drain-source cutoff current
IDSS
VDS = 20 V, VGS = 0
1.0
m
A
Gate-source cutoff current
IGSS
VGS = ±8.0 V, VDS = 0
±
10
m
A
Gate threshold voltage
VTH
ID = 1.0 mA, VDS = 10 V
0.40
0.85
1.30
V
Drain-source ON resistance 1
RDS(on) 1 ID = 1.0 A, VGS = 4.0 V
80
105
mW
Drain-source ON resistance 2
RDS(on) 2 ID = 0.5 A, VGS = 2.5 V
100
150
mW
Forward transfer admittance
Yfs ID = 1.0 A, VDS = 10 V
3.0
S
Short-circuit input capacitance (Common source)
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
280
pF
Short-circuit output capacitance (Common source)
Coss
18
pF
Reverse transfer capacitance (Common source)
Crss
17
pF
Turn-on delay time *
td(on)
VDD = 10 V, VGS = 0 V to 4 V, ID = 1.0 A
5
ns
Rise time *
tr
8
ns
Turn-off delay time *
td(off)
VDD = 10 V, VGS = 4 V to 0 V, ID = 1.0 A
20
ns
Fall time *
tf
18
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
VCC = 10 V
PW = 10 s
Duty Cycle ≤ 1%
ID = 1 A
RL = 10
VOUT
VIN
D
G
S
VIN
50
td(on)
td(off)
tr
tf
4 V
0 V
VIN
VOUT
10%
90%
10%
SBD
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage 1
VF 1
IF = 800 mA
0.47
V
Forward voltage 2
VF 2
IF = 1.0 A
0.52
V
Reverse current
IR
VR =20V
80
m
A
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
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