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參數(shù)資料
| 型號： | MTM76720 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, WSMINI6-F1, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 307K |
| 代理商： | MTM76720 |
Multi Chip Discrete
Publication date: March 2008
SJF00091AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM76720
Silicon N-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter circuits
For switching circuits
Overview
MTM76720 is the composite MOS FET (N-channel MOS FET and schottky
barrier diode) that is highly suitable for DC-DC converter and other switching
circuits.
Features
Built-in schottky barrier diode: VR = 20 V, IF = 1 A
Low ON resistance: Ron = 80 mW (VGS = 4.0 V)
Low short-circuit input capacitance (common source): Ciss = 280 pF
Small package: WSMini6-F1 (2.1 mm × 2.0 mm × 0.7 mm)
Low drive voltage: 2.5 V drive
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
FET
Drain-source surrender voltage
VDSS
20
V
Gate-source surrender voltage
VGSS
±
10
V
Drain current
ID
2.0
A
Peak drain current
IDP
12
A
Drain power dissipation *1
PD
700
mW
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
-
55 to +150
°
C
SBD
Reverse voltage
VR
20
V
Forward current (Average)
IF(AV)
1.0
A
Non-repetitive
peak reverse surge voltage *1
IFSM
9.0
A
Junction temperature
Tj
125
°
C
Storage temperature
Tstg
-
55 to +125
°
C
Overall
Total power dissipation *2
PD
700
mW
Note) *1: 60 Hz sine wave 1 cycle (Non-repetitive peak current)
*2: Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm
PD absolute maximum rating without a heat shink: 150 mW
Package
Code
WSMini6-F1
Pin Name
1. Gate
4. Anode
2. Source
5. N.C.
3. Cathode
6. Drain
Marking Symbo: 8B
Internal Connection
3
(C)
(A)
4
1
(G)
2
(S)
(D)
6
(N)
5
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