參數(shù)資料
型號(hào)： MTM86124
廠商： PANASONIC CORP
元件分類： 小信號(hào)晶體管
英文描述： 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, WSSMINI6-F1, 6 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 296K
代理商： MTM86124
Silicon MOS FETs (Small Signal)
Publication date: March 2008
SJF00083AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM86124
Silicon P-channel MOS FET
For DC-DC converter circuits
For switching circuits
Overview
MTM86124 is the P-channel MOS FET that is highly suitable for DC-DC
converter and other switching circuits.
Features
Low ON resistance: Ron = 100 mW (VGS = 4.0 V)
Low short-circuit input capacitance (common source): Ciss = 400 pF
Small package: WSSMini6-F1 (1.6 mm × 1.6 mm × 0.5 mm)
Low drive voltage: 2.5 V drive
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
-
20
V
Gate-source surrender voltage
VGSS
±
10
V
Drain current
ID
-
2.0
A
Peak drain current *1
IDP
-
8
A
Power dissipation *2
PD
540
mW
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Note) *1:Pulse width ≤ 10 ms, Duty cycle ≤ 1%
*2:Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm
PD absolute maximum rating without a heat shink: 150 mW
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = -1 mA, V
mA, VGS = 0
-
20
V
Drain-source cutoff current
IDSS
VDS = -20 V, V
V, VGS = 0
-
1.0
m
A
Gate-source cutoff current
IGSS
VGS = ±8 V, VDS = 0
±
10
m
A
Gate threshold voltage
VTH
ID = -1.0 mA, V
.0 mA, VDS = -10 V
V
-
0.4
-
0.85
-
1.3
V
Drain-source ON resistance 1 *1
RDS(on)1 ID = -1 A, V
A, VGS = -4.0 V
V
100
130
mW
Drain-source ON resistance 2 *1
RDS(on)2 ID = - 0.6 A, V
A, VGS = -2.5 V
V
130
200
mW
Forward transfer admittance*1
Yfs ID = -1.0 A, VDS = -10 V, f = 1 kHz
3.0
S
Short-circuit input capacitance (Common source)
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
400
pF
Short-circuit output capacitance (Common source)
Coss
40
pF
Reverse transfer capacitance (Common source)
Crss
35
pF
Turn-on time *2
ton
VDD = -10 V, VGS = 0 V to -4 V, ID = -1A
15
ns
Turn-off time *2
toff
VDD = -10 V, VGS = -4 V to 0 V, ID = -1A
100
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Test circuit
Package
Code
WSSMini6-F1
Pin Name
1: Drain
4: Source
2: Drain
5: Drain
3: Gate
6: Drain
Marking Symbo: DM
Internal Connection
3
(G)
(S)
4
1
(D)
2
(D)
6
(D)
5
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參數(shù)描述
MTM861240LBF 功能描述:MOSFET PCH MOS FET FLT LD 1.6x1.6mm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTM861270LBF 功能描述:MOSFET PCH MOS FET FLT LD 1.6x1.6mm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTM861280LBF 功能描述:MOSFET PCH MOS FET FLT LD 1.6x1.6mm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTM862270LBF 功能描述:MOSFET NCH MOS FET FLT LD 1.6x1.6mm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTM867270LBF 功能描述:MOSFET N-CH 20V 2.2A WSSMINI6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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