參數(shù)資料
型號: MTDF1C02HDR2
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 1700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MICROPAK-8
文件頁數(shù): 15/16頁
文件大?。?/td> 166K
代理商: MTDF1C02HDR2
MTDF1C02HD
http://onsemi.com
8
N–Channel
P–Channel
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
C,
CAP
ACIT
ANCE
(pF)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
10
0
10
15
VGS
VDS
TJ = 25°C
VDS = 0 V VGS = 0 V
400
200
0
20
Ciss
Coss
Crss
55
Ciss
Crss
600
800
V GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
Qg, TOTAL GATE CHARGE (nC)
0
1.0
2.0
3
3.0
ID = 1.7 A
TJ = 25°C
VGS
4
1
0
6
5
18
15
9
6
0
VDS
QT
Q1
Q2
4.0
5.0
VDS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS)
3
2
12
Q3
t,TIME
(ns)
RG, GATE RESISTANCE (OHMS)
1.0
100
10
1.0
VDD = 10 V
ID = 1.7 A
VGS = 4.5 V
TJ = 25°C
td(on)
tr
100
10
td(off)
tf
10
20
-10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
800
600
400
C,
CAP
ACIT
ANCE
(pF)
200
0
Ciss
Crss
Coss
TJ = 25°C
VGS = 0 V
QG, TOTAL GATE CHARGE (nC)
6.0
0
3
1
0
V
1.0
2.0
3.0
4.0
5.0
2
4
5
GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
VGS
VDS
TJ = 25°C
ID = 1.2 A
VDS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS)
12
4.0
0
8.0
16
20
QT
Q1
Q2
Q3
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
t,TIME
(ns)
10
TJ = 25°C
ID = 1.2 A
VDD = 10 V
VGS = 4.5 V
tr
tf
td(off)
td(on)
VGS
VDS
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