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參數資料
| 型號： | MTDF1C02HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICROPAK-8 |
| 文件頁數： | 10/16頁 |
| 文件大?。?/td> | 166K |
| 代理商： | MTDF1C02HDR2 |
MTDF1C02HD
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 2.)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(Cpk ≥ 2.0) (Notes 2. & 4.)
(VGS = 0 Vdc, ID = 250 Adc)
V(BR)DSS
(N)
(P)
20
–
Vdc
Breakdown Temperature Coefficient
(Positive)
(N)
(P)
–
5.0
14
–
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 16 Vdc)
(VGS = 0 Vdc, VDS = 20 Vdc)
IDSS
(N)
(P)
–
1.0
Adc
Gate–Body Leakage Current (VGS = ±8.0 Vdc, VDS = 0)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(Cpk ≥ 2.0) ((Notes 2. & 4.)
(VDS = VGS, ID = 250 Adc)
VGS(th)
(N)
(P)
0.7
0.90
0.95
1.1
1.4
Vdc
Threshold Temperature Coefficient
(Negative)
(N)
(P)
–
2.5
2.2
–
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.7 Adc)
(VGS = 4.5 Vdc, ID = 1.6 Adc)
RDS(on)
(N)
(P)
–
0.100
0.146
0.120
0.175
Ohm
Drain–to–Source On–Resistance
(Cpk ≥ 2.0) (Notes 2. & 4.)
(VGS = 2.7 Vdc, ID = 0.85 Adc)
(VGS = 2.7 Vdc, ID = 0.8 Adc)
RDS(on)
(N)
(P)
–
0.133
0.220
0.16
0.28
Ohm
Forward Transconductance (Note 2.)
(VDS = 10 Adc, ID = 0.85 Adc)
(VDS = 10 Adc, ID = 0.6 Adc)
gFS
(N)
(P)
2.0
1.3
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
(N)
(P)
–
145
225
–
pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
(N)
(P)
–
90
150
–
Transfer Capacitance
)
Crss
(N)
(P)
–
38
60
–
SWITCHING CHARACTERISTICS (Note 4.)
Turn–On Delay Time
(VDD = 10 Vdc, ID = 1.7 Adc,
td(on)
(N)
(P)
–
8.0
15
–
ns
Rise Time
(VDD 10 Vdc, ID 1.7 Adc,
VGS = 4.5 Vdc,
RG = 6.0 ) (Note 2.)
tr
(N)
(P)
–
27
–
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 1.2 Adc,
VGS = 4.5 Vdc,
td(off)
(N)
(P)
–
23
60
–
Fall Time
VGS = 4.5 Vdc,
RG = 6.0 ) (Note 2.)
tf
(N)
(P)
–
34
72
–
Turn–On Delay Time
(VDS = 10 Vdc, ID = 0.85 Adc,
td(on)
(N)
(P)
–
16
20
–
Rise Time
(VDS 10 Vdc, ID 0.85 Adc,
VGS = 2.7 Vdc,
RG = 6.0 ) (Note 2.)
tr
(N)
(P)
–
79
94
–
Turn–Off Delay Time
(VDS = 10 Vdc, ID = 0.6 Adc,
VGS = 2.7 Vdc,
td(off)
(N)
(P)
–
24
49
–
Fall Time
VGS = 2.7 Vdc,
RG = 6.0 ) (Note 2.)
tf
(N)
(P)
–
31
76
–
2. Negative signs for P–Channel device omitted for clarity.
3. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MTDF1N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
| MTDF2N06HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: |
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