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參數(shù)資料
| 型號(hào)： | MTDF1C02HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICROPAK-8 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 166K |
| 代理商： | MTDF1C02HDR2 |
MTDF1C02HD
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS – continued (TA = 25°C unless otherwise noted) (Note 2.)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS – continued (Note 4.)
Total Gate Charge
QT
(N)
(P)
–
3.9
5.3
5.5
7.5
nC
Gate–Source Charge
(VDS = 16 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc) (Note 2.)
Q1
(N)
(P)
–
0.4
0.7
–
Gate–Drain Charge
(VDS = 16 Vdc, ID = 1.2 Adc,
VGS = 4.5 Vdc) (Note 2.)
Q2
(N)
(P)
–
1.7
2.6
–
VGS = 4.5 Vdc) (Note 2.)
Q3
(N)
(P)
–
1.5
1.9
–
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage (Note 3.)
(IS = 1.7 Adc, VGS = 0 Vdc)
(Note 2.)
(IS = 1.2 Adc, VGS = 0 Vdc)
VSD
(N)
(P)
–
0.84
0.89
1.0
1.1
Vdc
Reverse Recovery Time
trr
(N)
(P)
–
29
86
–
ns
(IF = IS,
ta
(N)
(P)
–
14
27
–
(IF = IS,
dIS/dt = 100 A/s) (Note 2.)
tb
(N)
(P)
–
15
59
–
Reverse Recovery Stored
Charge
QRR
(N)
(P)
–
0.018
0.115
–
C
2. Negative signs for P–Channel device omitted for clarity.
3. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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| MTDF1N02HDR2 | 1700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTDF1N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
| MTDF2N06HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: |
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