參數(shù)資料
型號(hào): MTD6P10E-T4
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: 6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 261K
代理商: MTD6P10E-T4
MTD6P10E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
VGS = 10 V
SINGLE PULSE
TC = 25°C
ID = 6 A
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
100
10
1.0
0.1
100
10
1.0
0.1
200
160
120
80
40
0
25
50
75
100
125
150
100
s
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
t, TIME (s)
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
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