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參數(shù)資料
| 型號： | MTD3302 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mohm |
| 中文描述： | 8300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 87K |
| 代理商： | MTD3302 |
1
Motorola TMOS Power MOSFET Transistor Device Data
"
Power Surface Mount Products
! !
WaveFET
devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Characterized Over a Wide Range of Power Ratings
Ultralow RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
Logic Level Gate Drive — Can Be Driven by
Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Industry Standard DPAK Surface Mount Package
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise specified)
Parameter
Symbol
VDSS
VDGR
VGS
TJ, Tstg
EAS
Value
30
30
±
20
–55 to 150
Unit
Vdc
Vdc
Vdc
°
C
mJ
Drain–to–Source Voltage
Drain–to–Gate Voltage
Gate–to–Source Voltage
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, L = 126 mH, IL(pk) = 3.0 A, VDS = 30 Vdc)
500
DEVICE MARKING
ORDERING INFORMATION
D3302
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
2500
MTD3302T4
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Order this document
by MTD3302/D
SEMICONDUCTOR TECHNICAL DATA
CASE 369A–13, Style 2
DPAK
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 10 m
D
G
S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTDF1C02HD | COMPLEMENTARY DUAL TMOS POWER FET |
| MTE125N20E | TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM |
| MTE215N10E | TMOS POWER FET 215 AMPERES 100 VOLTS RDS(on) = 0.0055 OHM |
| MTE30N50E | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM |
| MTE53N50E | TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD3302T4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:MOSFET Transistor, N-Channel, TO-252AA |
| MTD3610D3 | 功能描述:Photodiode 940nm 制造商:marktech optoelectronics 系列:- 包裝:散裝 零件狀態(tài):有效 波長:940nm 顏色 - 增強:- 頻譜范圍:400nm ~ 1060nm 二極管類型:- 不同 nm 時的響應(yīng)度:0.45 A/W @ 660nm 響應(yīng)時間:- 電壓 - DC 反向（Vr）（最大值）:20V 電流 - 暗（典型值）:10nA 有效面積:- 視角:- 工作溫度:-20°C ~ 85°C 安裝類型:- 封裝/外殼:- 標準包裝:10 |
| MTD392 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Coaxial Transceiver Interface |
| MTD392N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Coaxial Transceiver Interface |
| MTD392V | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Coaxial Transceiver Interface |
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