- 您現在的位置：買賣IC網 > PDF目錄378679 > MTDF1C02HD (MOTOROLA INC) COMPLEMENTARY DUAL TMOS POWER FET PDF資料下載
參數資料
| 型號： | MTDF1C02HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET |
| 中文描述： | 1700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 1/14頁 |
| 文件大?。?/td> | 276K |
| 代理商： | MTDF1C02HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
Micro8
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8
devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package — Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
N–Channel
P–Channel
VDSS
20
20
V
Drain–to–Gate Voltage (RGS = 1.0 M )
N–Channel
P–Channel
VDGR
20
20
V
Gate–to–Source Voltage — Continuous
N–Channel
P–Channel
VGS
±
8.0
±
8.0
V
Operating and Storage Temperature Range
TJ and Tstg
–55 to 150
°
C
DEVICE MARKING
CA
ORDERING INFORMATION
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
4000 units
MTDF1C02HD
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International Rectifier.
Order this document
by MTDF1C02HD/D
SEMICONDUCTOR TECHNICAL DATA
D
S
G
P–Channel
D
S
G
N–Channel
CASE 846A–02, Style 2
Micro8
COMPLEMENTARY
DUAL TMOS POWER FET
20 VOLTS
RDS(on) = 0.120 OHM
1.7 AMPERES
(N–CHANNEL)
RDS(on) = 0.175 OHM
1.6 AMPERES
(P–CHANNEL)
Motorola Preferred Device
Source 1
Gate 1
Source 2
Gate 2
1
2
3
4
8
7
6
5
Top View
Drain 1
Drain 1
Drain 2
Drain 2
5
6
4
3
7
8
2
1
Preferred
devices are Motorola recommended choices for future use and best overall value.
相關PDF資料 |
PDF描述 |
|---|---|
| MTE125N20E | TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM |
| MTE215N10E | TMOS POWER FET 215 AMPERES 100 VOLTS RDS(on) = 0.0055 OHM |
| MTE30N50E | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM |
| MTE53N50E | TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM |
| MTH6N55 | Power Field Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MTDF1C02HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
發(fā)布緊急采購，3分鐘左右您將得到回復。