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參數(shù)資料
| 型號(hào)： | MTE30N50E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM |
| 中文描述： | 30 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 229K |
| 代理商： | MTE30N50E |
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new
energy design also offers a drain–to–source diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, PWM motor controls, and other
inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
2500 V RMS Isolated ISOTOP Package
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
Very Low Internal Parasitic Inductance
IDSS and VDS(on) Specified at Elevated Temperature
U.L. Recognized, File #E69369
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
500
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
500
Vdc
— Non–Repetitive (tp
≤
10 ms)
±
20
±
40
Vdc
Vpk
Drain Current — Continuous @ 25
°
C
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ 25
°
C
Derate above 25
°
C
ID
ID
IDM
30
12
80
Adc
Apk
PD
250
2.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL= 30 Apk, L = 10 mH, RG = 25
)
3000
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
0.5
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGS–THOMSON Microelectronics.
260
°
C
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTE30N50E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
30 AMPERES
500 VOLTS
RDS(on) = 0.150 OHM
Motorola Preferred Device
D
S
G
SOT–227B
1
2
3
4
1. Source
2. Gate
3. Drain
4. Source 2
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