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參數(shù)資料
| 型號： | MTD2955V |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 234K |
| 代理商： | MTD2955V |
MTD2955V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk ≥ 2.0) (Note 5)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
58
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(Cpk ≥ 2.0) (Note 5)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.8
5.0
4.0
Vdc
mV/°C
Static DraintoSource OnResistance
(Cpk ≥ 1.5) (Note 5)
(VGS = 10 Vdc, ID = 6.0 Adc)
RDS(on)
0.185
0.230
W
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 12 Adc)
(VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C)
VDS(on)
2.9
2.5
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)
gFS
3.0
5.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
550
770
pF
Output Capacitance
Coss
200
280
Reverse Transfer Capacitance
Crss
50
100
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 10 Vdc,
RG = 9.1 W)
td(on)
15
30
ns
Rise Time
tr
50
100
TurnOff Delay Time
td(off)
24
50
Fall Time
tf
39
80
Gate Charge
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
QT
19
30
nC
Q1
4.0
Q2
9.0
Q3
7.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
1.8
1.5
3.0
Vdc
Reverse Recovery Time
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
115
ns
ta
90
tb
25
Reverse Recovery Stored
Charge
QRR
0.53
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| MTD2955V1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Rail |
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