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參數(shù)資料
| 型號： | MTD20P06HDLG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 86K |
| 代理商： | MTD20P06HDLG |
MTD20P06HDL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
81.3
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
mAdc
GateBody Leakage Current (VGS = ±15 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
1.0
1.7
3.9
2.0
Vdc
mV/
°C
Static DrainSource OnResistance
(VGS = 5.0 Vdc, ID = 7.5 Adc)
RDS(on)
143
175
m
W
DrainSource OnVoltage (VGS = 5.0 Vdc)
(ID = 15 Adc)
(ID = 7.5 Adc, TJ = 125°C)
VDS(on)
2.3
1.6
3.0
2.0
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 7.5 Adc)
gFS
9.0
11
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
850
1190
pF
Output Capacitance
Coss
210
290
Reverse Transfer Capacitance
Crss
66
130
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDS = 30 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc,RG = 9.1 W)
td(on)
19
38
ns
Rise Time
tr
175
350
TurnOff Delay Time
td(off)
41
82
Fall Time
tf
68
136
Gate Charge
(VDS = 48 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc)
QT
20.6
29
nC
Q1
3.7
Q2
7.6
Q3
8.4
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 15 Adc, VGS = 0 Vdc)
(IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
2.5
1.9
3.0
Vdc
Reverse Recovery Time
(IS = 15 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
64
ns
ta
50
tb
14
Reverse Recovery Stored Charge
QRR
0.177
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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