參數(shù)資料
型號(hào)： MTD20P06HDLG
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369C-01, DPAK-3
文件頁數(shù)： 1/8頁
文件大?。?/td> 86K
代理商： MTD20P06HDLG
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 6
1
Publication Order Number:
MTD20P06HDL/D
MTD20P06HDL
Preferred Device
Power MOSFET
20 Amps, 60 Volts, Logic
Level
PChannel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
lowvoltage, highspeed switching applications in power supplies,
converters and PWM motor controls, and other inductive loads. The
avalanche energy capability is specified to eliminate the guesswork in
designs where inductive loads are switched, and to offer additional
safety margin against unexpected voltage transients.
Features
Ultra Low RDS(on), HighCell Density, HDTMOS
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified
PbFree Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 MW)
VDGR
60
Vdc
GateSource Voltage
Continuous
NonRepetitive (tpv10 ms)
VGS
VGSM
"15
"20
Vdc
Vpk
Drain Current
Continuous
Continuous @ 100
°C
Single Pulse (tpv10 ms)
ID
IDM
15
9.0
45
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TC = 25°C (Note 2)
PD
72
0.58
1.75
W
W/
°C
W
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 15 Apk, L = 2.7 mH, RG = 25 W)
EAS
300
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RqJC
RqJA
1.73
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. inch pad size.
D
S
G
20 AMPERES, 60 VOLTS
RDS(on) = 175 mW
Device
Package
Shipping
ORDERING INFORMATION
MTD20P06HDL
DPAK
75 Units/Rail
PChannel
MTD20P06HDLT4
DPAK
2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MTD20P06HDLT4G
DPAK
(PbFree)
2500 Tape & Reel
MARKING DIAGRAM & PIN ASSIGNMENTS
20P06HL = Device Code
Y
= Year
WW
= Work Week
G
= PbFree Package
Gate 1
4
Drain
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1 2
3
4
YWW
06HLG
Drain 2
Source 3
20P
相關(guān)PDF資料
PDF描述
MTD20P06HDLT4 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD2955E 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD2955V 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD2N20-1 2 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
MTD2N50T4 2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTD20P06HDLT4 功能描述:MOSFET P-CH 60V 15A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
MTD214 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ethernet Encoder/Decoder and 10BaseT Transceiver with Built-in Waveform Shaper
MTD2525J 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:DMOS Microstepping Dual PWM Motor Driver
MTD2955E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM
MTD2955ET4 制造商:Motorola Inc 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*