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參數(shù)資料
| 型號(hào)： | MTD20N06HDLT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| 中文描述： | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 369C-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 235K |
| 代理商： | MTD20N06HDLT4G |
MTD20N06HDL
http://onsemi.com
6
I
t, TIME
Figure 11. Reverse Recovery Time (t
rr
)
di/dt = 300 A/ s
Standard Cell Density
t
rr
High Cell Density
t
rr
t
b
t
a
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain
to
source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
C
) of 25
°
C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance
General Data and Its Use.”
Switching between the off
state and the on
state may
traverse any load line provided neither rated peak current
(I
DM
) nor rated voltage (V
DSS
) is exceeded, and that the
transition time (t
r
, t
f
) does not exceed 10 s. In addition the
total power averaged over a complete switching cycle must
not exceed (T
J(MAX)
T
C
)/(R
JC
).
A power MOSFET designated E
FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
non
linearly with an increase of peak current in avalanche
and peak junction temperature.
Although many E
FETs can withstand the stress of
drain
to
source avalanche at currents up to rated pulsed
current (I
DM
), the energy rating is specified at rated
continuous current (I
D
), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I
D
can safely be
assumed to equal the values indicated.
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
EA
A
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
025
50
75
100
125
200
50
100
150
150
0.1
1.0
100
100
1.0
10
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
10
10 s
100 s
1 ms
dc
10 ms
I
D
= 20 A
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
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| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
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| MTD20N06VT4 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD20P03 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20P03HDL | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
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