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參數(shù)資料
| 型號(hào)： | MTD20N06HDLT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| 中文描述： | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MTD20N06HDLT4G |
MTD20N06HDL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
25
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
10
100
Adc
Gate
Body Leakage Current (V
GS
=
±
15 Vdc, V
DS
= 0)
I
GSS
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(V
= V
, I
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.5
6.0
2.0
Vdc
mV/
°
C
Static Drain
Source On
Resistance
(V
GS
= 4.0 Vdc, I
D
= 10 Adc)
(V
GS
= 5.0 Vdc, I
D
= 10 Adc)
R
DS(on)
0.045
0.037
0.070
0.045
Drain
Source On
Voltage (V
GS
= 5.0 Vdc)
(I
D
= 20 Adc)
(I
D
= 10 Adc, T
J
= 125
°
C)
V
DS(on)
0.76
1.2
1.1
Vdc
Forward Transconductance (V
DS
= 4.0 Vdc, I
D
= 10 Adc)
g
FS
6.0
12
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
863
1232
pF
Output Capacitance
C
oss
216
300
Reverse Transfer Capacitance
C
rss
53
73
SWITCHING CHARACTERISTICS
(Note 4)
Turn
On Delay Time
(V
DS
= 30 Vdc, I
D
= 20 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1 )
t
d(on)
11
15
ns
Rise Time
t
r
151
190
Turn
Off Delay Time
t
d(off)
34
35
Fall Time
t
f
75
98
Gate Charge
(V
DS
= 48 Vdc, I
= 20 Adc,
V
GS
= 5.0 Vdc)
Q
T
14.6
22
nC
Q
1
3.25
Q
2
7.75
Q
3
7.0
SOURCE
DRAIN DIODE CHARACTERISTICS
Forward On
Voltage
(I
S
= 20 Adc, V
GS
= 0 Vdc)
(I
S
= 20 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
0.95
0.88
1.1
Vdc
Reverse Recovery Time
(I
S
= 20 Adc, dI
S
/dt = 100 A/ s)
t
rr
22
ns
t
a
12
t
b
34
Reverse Recovery Stored Charge
Q
RR
0.049
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
L
D
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
L
S
7.5
nH
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
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