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參數(shù)資料
| 型號： | MTD20N06HDL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大小： | 161K |
| 代理商： | MTD20N06HDL1 |
MTD20N06HDL
http://onsemi.com
7
I S
,SOURCE
CURRENT
t, TIME
Figure 11. Reverse Recovery Time (trr)
di/dt = 300 A/
ms
Standard Cell Density
High Cell Density
tb
trr
ta
trr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance
General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 ms. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RJC).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
nonlinearly with an increase of peak current in avalanche
and peak junction temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
E
AS
,SINGLE
PULSE
DRAINT
OSOURCE
A
V
ALANCHE
ENERGY
(mJ)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
0
25
50
75
100
125
200
50
100
150
0.1
1.0
100
1.0
10
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
10
ms
100
ms
1 ms
dc
10 ms
ID = 20 A
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTD20N06HDLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06HDLT4G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06V | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20N06VT4 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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