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參數資料
| 型號： | MTD20N06HDL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 161K |
| 代理商： | MTD20N06HDL1 |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 4
1
Publication Order Number:
MTD20N06HDL/D
MTD20N06HDL
Preferred Device
Power MOSFET
20 Amps, 60 Volts, Logic Level
NChannel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a draintosource diode with a fast
recovery time. Designed for lowvoltage, highspeed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits, and
inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched, and to offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
w These devices are available in Pbfree package(s). Specifications herein
apply to both standard and Pbfree devices. Please see our website at
www.onsemi.com for specific Pbfree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
1
Gate
3
Source
2
Drain
4
Drain
20 AMPERES
60 VOLTS
RDS(on) = 45 mW
Device
Package
Shipping
ORDERING INFORMATION
MTD20N06HDL
DPAK
75 Units/Rail
DPAK
CASE 369C
Style 2
NChannel
D
S
G
MTD20N06HDL1
DPAK
Straight Lead
75 Units/Rail
MARKING DIAGRAMS
20N06HL Device Code
Y
= Year
WW
= Work Week
MTD20N06HDLT4
DPAK
2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
1 2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
Style 2
1
2
3
4
YWW
20N
06HL
YWW
20N
06HL
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| MTD20P03HDL | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MTD20N06HDLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06HDLT4G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06V | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20N06VT4 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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