參數(shù)資料
型號(hào)： MTD20N06HDL1
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369D-01, DPAK-3
文件頁(yè)數(shù)： 5/10頁(yè)
文件大?。?/td> 161K
代理商： MTD20N06HDL1
MTD20N06HDL
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (Amps)
VGS, GATETOSOURCE VOLTAGE (Volts)
I D
,DRAIN
CURRENT
(AMPS)
Figure 1. OnRegion Characteristics
0
10
20
30
40
Figure 2. Transfer Characteristics
010
20
30
40
0
0.02
0.04
0.06
0.07
0.025
0.03
0.04
0.05
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0.6
0.8
1.0
1.2
1.6
Figure 5. OnResistance Variation with
Temperature
1.5
2
2.5
3
4
3.5
4.5
VDS ≥ 10 V
100
°C
25
°C
0.05
0.03
0.01
VGS = 5 V
55
°C
25
°C
010
20
30
40
0.045
0.035
50
25
0
25
50
75
100
125
150
1.4
TJ = 55°C
TJ = 100°C
TJ = 25°C
VGS = 10 V
5 V
VGS = 5 V
ID = 10 A
0
0.4
0.8
1.2
1.6
2.0
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
20
10
TJ = 25°C
2.5 V
0.2
0.6
1.8
1.4
1.0
30
3 V
3.5 V
4 V
4.5 V
5 V
6 V
VGS = 10 V
40
8 V
Figure 6. DraintoSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
10
1000
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
100
010
30
20
VGS = 0 V
TJ = 125°C
100
°C
1
40
60
50
25
°C
相關(guān)PDF資料
PDF描述
MTD20N06VT4 20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD20N06VT4 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD20P03HDL1G 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD20P03HDL 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD20P03HDL1 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTD20N06HDLT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
MTD20N06HDLT4G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK
MTD20N06HDT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
MTD20N06V 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MTD20N06VT4 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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