參數(shù)資料
型號(hào)： MTD1N60E
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369A-13, DPAK-3
文件頁(yè)數(shù)： 4/10頁(yè)
文件大?。?/td> 233K
代理商： MTD1N60E
MTD1N60E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
04
8
12
16
20
0
0.8
1.2
1.6
2
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2
2.8
3.6
4.4
5.2
6.8
0
0.4
1.2
2
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
0.2
0.6
1
1.6
2
0
4
8
12
16
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.6
1
1.4
2
5
6
7
8
9
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0
0.4
1.2
2.4
0
100
200
300
400
600
1
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
100°C
TJ = 100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 0.5 A
18
6 V
5 V
1.6
0.8
1.8
1.4
1
0.6
2.4
3.2
4
4.8
5.6
25°C
55°C
2
0.4
0.8
1.4
1.2
8.5
7.5
6.5
5.5
0.4
0.8
1.2
VGS = 10 V
15 V
50
25
0
50
25
75
100
125
150
TJ = 125°C
25°C
100°C
0.4
0.2
2
6
10
14
6
6.4
6
10
14
1.8
1.6
1.8
2
1.6
0.8
500
25°C
VGS = 10 V
7 V
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
相關(guān)PDF資料
PDF描述
MTD1N60ET4 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTD1N80E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
MTD1P40ET4 制造商:Rochester Electronics LLC 功能描述:- Bulk
MTD1P50E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM
MTD2001 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:Stepping Motor Driver ICs
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