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參數(shù)資料
| 型號(hào)： | MTD1N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 233K |
| 代理商： | MTD1N60E |
MTD1N60E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
600
—
720
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.2
6.0
4.0
—
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 0.5 Adc)
RDS(on)
—
5.9
8.0
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125°C)
VDS(on)
—
9.6
8.4
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc)
gFS
0.5
0.8
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
—
224
310
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
27
40
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
6.0
10
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
td(on)
—
8.8
20
ns
Rise Time
(VDD = 300 Vdc, ID = 1.0 Adc,
VGS =10Vdc
tr
—
6.8
14
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
15
30
Fall Time
RG
9.1
)
tf
—
20
40
Gate Charge
(S
Fi
8)
QT
—
7.1
11
nC
(See Figure 8)
(VDS = 400 Vdc, ID = 1.0 Adc,
Q1
—
1.7
—
(VDS
400 Vdc, ID
1.0 Adc,
VGS = 10 Vdc)
Q2
—
3.2
—
Q3
—
3.9
—
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (1)
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.82
0.7
1.4
—
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
—
464
—
ns
(See Figure 14)
(IS = 1.0 Adc, VGS = 0 Vdc,
ta
—
36
—
(IS
1.0 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s)
tb
—
428
—
Reverse Recovery Stored Charge
QRR
—
0.629
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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