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參數(shù)資料
| 型號(hào)： | MTD1P40E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 182K |
| 代理商： | MTD1P40E |
1
Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
TMOS E-FET.
Power Field Effect Transistor
DPAK for Surface Mount
P–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation mode. The new energy efficient design also offers a
drain–to–soure diode with fast recovery time. Designed for high
converters and PWM motor controls, these devices are particularly
well suited for low power flourescent lighting applications where
VDSS and RDS(on) have been optimized for use with complimentary
N–Channel devices.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
400
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
400
Vdc
Gate–Source Voltage — Continuous
Gate–Source Voltage — Single Pulse (tp ≤ 50 s)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
1.0
0.8
3.5
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TC = 25°C, when mounted with the minimum recommended pad size
PD
65
0.53
1.75
Watts
W/
°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ<150°C)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 10 mH, RG = 25 )
EAS
45
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient(1)
R
θJC
R
θJA
R
θJA
1.91
100
71.4
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 5 seconds
TL
260
°C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTD1P40E/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
D
S
G
CASE 369A–13, Style 2
DPAK
MTD1P40E
TMOS POWER FET
1.0 AMPERES
400 VOLTS
RDS(on) = 8.0 OHM
Motorola Preferred Device
Motorola, Inc. 1998
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD1P40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD1P50E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM |
| MTD2001 | 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:Stepping Motor Driver ICs |
| MTD2001-4101 | 功能描述:馬達(dá)/運(yùn)動(dòng)/點(diǎn)火控制器和驅(qū)動(dòng)器 VCEO=60 IO=1.5 PT=5 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
| MTD2001-4102 | 功能描述:馬達(dá)/運(yùn)動(dòng)/點(diǎn)火控制器和驅(qū)動(dòng)器 VCEO=60 IO=1.5 PT=5 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
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