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參數(shù)資料
| 型號： | MTD15N06VT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 218K |
| 代理商： | MTD15N06VT4 |
MTD15N06V
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
VGS = 10 V
SINGLE PULSE
TC = 25°C
1.0
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1.0
10
100
0.1
dc
100
s
1 ms
10 ms
10
s
t, TIME (s)
1.0
0.1
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.02
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
A
V
ALANCHE
ENERGY
(mJ)
25
50
75
100
125
150
0
120
80
60
40
100
20
ID = 15 A
175
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD1N40 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
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| MTD1N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
| MTD1N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
| MTD1P40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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