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參數(shù)資料
| 型號： | MTD15N06VT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 218K |
| 代理商： | MTD15N06VT4 |
MTD15N06V
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
0
1
2
3
5
7
0
10
20
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2
4
6
8
10
0
5
10
20
30
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
5
10
15
20
30
0
0.05
0.10
0.20
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
10
20
40
50
60
10
100
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
9 V
8 V
6 V
5 V
7 V
VGS = 10 V
TJ = 100°C
25
°C
– 55
°C
TJ = – 55°C
25
°C
100
°C
VGS = 0 V
TJ = 125°C
5
15
25
4
6
15
25
30
VDS ≥ 10 V
0.15
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ = 25°C
0.13
0.11
0.09
0.07
0.05
10
5
0
15
20
25
30
VGS = 10 V
15 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
VGS = 10 V
ID = 7.5 A
2
1.6
1.2
0.8
0.4
– 50
– 25
0
25
50
75
100
125
150
175
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD1N50E-T4 | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| MTD1N60ET4 | 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD1N40 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | 制造商:Motorola Inc 功能描述: |
| MTD1N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
| MTD1N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
| MTD1P40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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