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參數(shù)資料
| 型號(hào)： | MTD15N06VL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 106K |
| 代理商： | MTD15N06VL1 |
MTD15N06VL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk
≥ 2.0) (Note 5)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
68
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(Cpk
≥ 2.0) (Note 5)
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
4.0
2.0
Vdc
mV/
°C
Static DraintoSource OnResistance
(Cpk
≥ 2.0) (Note 5)
(VGS = 5.0 Vdc, ID = 7.5 Adc)
RDS(on)
0.075
0.085
W
DraintoSource OnVoltage
(VGS = 5.0 Vdc, ID = 15 Adc)
(VGS = 5.0 Vdc, ID = 7.5 Adc, TJ = 150°C)
VDS(on)
1.5
1.3
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 7.5 Adc)
gFS
8.0
10
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
570
880
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
180
380
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
45
110
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
td(on)
11
50
ns
Rise Time
(VDD = 30 Vdc, ID = 15 Adc,
VGS =50Vdc
tr
150
210
TurnOff Delay Time
VGS = 5.0 Vdc,
RG = 9.1 W)
td(off)
27
160
Fall Time
G
)
tf
70
140
Gate Charge
QT
12
20
nC
(VDS = 48 Vdc, ID = 15 Adc,
Q1
3.0
(VDS = 48 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc)
Q2
7.0
Q3
11
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(IS = 15 Adc, VGS = 0 Vdc)
(IS = 15 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
0.96
0.85
1.6
Vdc
Reverse Recovery Time
trr
63
ns
(I =15Adc V
= 0 Vdc
ta
42
(IS = 15 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
tb
21
Reverse Recovery Stored
Charge
dIS/dt
100 A/
ms)
QRR
0.140
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD15N06VLT4 | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| MTD15N06VL | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD15N06VT4 | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD15N06VLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK T/R |
| MTD15N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK T/R |
| MTD1N40 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | 制造商:Motorola Inc 功能描述: |
| MTD1N60E | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
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