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參數(shù)資料
| 型號： | MTD15N06VL-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 267K |
| 代理商： | MTD15N06VL-1 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 5
1
Publication Order Number:
MTD15N06VL/D
MTD15N06VL
Power MOSFET
15 Amps, 60 Volts
NChannel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 MW)
VDGR
60
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
± 15
± 25
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp ≤ 10 ms)
ID
IDM
15
12
53
Adc
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ 25°C (Note 2)
PD
60
0.4
2.1
Watts
W/°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak
IL = 15 Apk, L = 1.0 mH, RG = 25 W)
EAS
113
mJ
Thermal Resistance
Junction to Case
Junction to Ambient (Note 1)
Junction to Ambient (Note 2)
RqJC
RqJA
2.5
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
15 AMPERES
60 VOLTS
RDS(on) = 75 mW (Typ)
Device
Package
Shipping
ORDERING INFORMATION
MTD15N06VL
DPAK
75 Units/Rail
NChannel
D
S
G
MTD15N06VL1
DPAK
75 Units/Rail
MTD15N06VLT4
DPAK
2500 Tape & Reel
http://onsemi.com
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
Style 2
MARKING DIAGRAMS
15N06VL Device Code
Y
= Year
WW
= Work Week
YWW
15N
06VL
1 2
3
4
YWW
15N
06VL
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
Style 2
1
2
3
4
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| MTD15N06VL | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| MTD1N50E-T4 | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1N60E | 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD15N06VLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK T/R |
| MTD15N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK T/R |
| MTD1N40 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | 制造商:Motorola Inc 功能描述: |
| MTD1N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
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