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參數(shù)資料
| 型號： | MTD15N06VL-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 267K |
| 代理商： | MTD15N06VL-1 |
MTD15N06VL
http://onsemi.com
6
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
I D
,DRAIN
CURRENT
(AMPS)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0.1
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
V= 15 V
SINGLE PULSE
TC = 25°C
1
10
100
0.1
dc
100
ms
1 ms
10 ms
10
ms
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
t, TIME (s)
1.00
0.10
0.01
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.02
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
A
V
ALANCHE
ENERGY
(mJ)
25
50
75
100
125
ID = 15 A
150
0
100
70
60
50
80
40
30
20
10
175
90
110
120
相關PDF資料 |
PDF描述 |
|---|---|
| MTD15N06VL | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD15N06VT4 | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1N50E-T4 | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1N60E | 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1N60ET4 | 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTD15N06VLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK T/R |
| MTD15N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK T/R |
| MTD1N40 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | 制造商:Motorola Inc 功能描述: |
| MTD1N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
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