參數(shù)資料
型號(hào)： MTD1312
廠商： MOTOROLA INC
元件分類(lèi)： JFETs
英文描述： 25 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 4/10頁(yè)
文件大?。?/td> 186K
代理商： MTD1312
MTD1312
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Drain Current
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
5.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
5.0
10
VGS, GATE–TO–SOURCE (VOLTS)
0
–25
–50
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
1.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
020
1.0E–07
1.0E–08
1.0E–09
1.0E–10
0
I D
,DRAIN
CURRENT
(AMPS)
R
0
2.0
4.0
6.0
0
2.0
3.0
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
25
10
30
I DSS
,LEAKAGE
(AMPS)
40
2.5
0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
10
I D
,DRAIN
CURRENT
(AMPS)
0
0.5
2.0
4.0
40
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
40
0
ID, DRAIN CURRENT (AMPS)
0.020
0.010
0.005
0
R
10
20
30
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
TJ = 25°C
15
20
25
30
35
1.0
3.0
9.0
8.0
10
7.0
3.0
3.5
20
15
5.0
25
1.0
4.0
5.0
0.02
0.10
0.015
TJ = 25°C
VGS = 2.7 V
3.3 V
TJ = 125°C
25
°C
–55
°C
ID = 10 A
TJ = 25°C
10 V
VGS = 4.5 V
ID = 10 A
VGS = 10 V
VDS ≥ 10 V
TJ = 125°C
100
°C
25
°C
6.0 V
10 V
75
100
150
125
3.7 V
4.5 V
30
35
1.5
1.0
0.04
0.06
0.08
6.0
7.0
8.0
9.0
0.5
VGS = 0 V
相關(guān)PDF資料
PDF描述
MTD14N10E 14 A, 100 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD15N06VL1 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD15N06VLT4 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD15N06VL-1 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD15N06VL 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
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