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參數(shù)資料
| 型號： | MTD1312 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 186K |
| 代理商： | MTD1312 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
HDTMOS1A
High Density Power FET
DPAK for Surface Mount
N–Channel Enhancement Mode Silicon Gate
This advanced HDTMOS1A power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode Is Characterized for Use In Bridge Circuits
Surface Mount Package Available in 16 mm, 13″ / 2500 Unit
Tape & Reel, Add “T4” Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp
≤ 10 ms)
VGS
VGSM
± 20
Vdc
Vpk
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
POWER RATINGS (TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain Current — Continuous
Drain Current — Single Pulse (tp
≤ 10 ms)
Mounted on heat sink
TC = 25°C
ID
IDM
25
75
Adc
Apk
Continuous Source Current (Diode Conduction)
VGS =10Vdc
IS
25
Adc
Total Power Dissipation @ TA = 25°C
VGS = 10 Vdc
PD
72
Watts
Thermal Resistance — Junction–to–Case
Steady State
R
θJC
1.72
°C/W
Parameter
Symbol
Value
Unit
Drain Current — Continuous
Drain Current — Single Pulse (tp
≤ 10 ms)
Mounted on minimum recommended
FR–4 or G–10 board
ID
IDM
6.0
18
Adc
Apk
Continuous Source Current (Diode Conduction)
VGS =10Vdc
IS
1.1
Adc
Total Power Dissipation @ TA = 25°C
VGS = 10 Vdc
PD
1.0
Watts
Thermal Resistance — Junction–to–Ambient
Steady State
R
θJA
118
°C/W
DEVICE MARKING
ORDERING INFORMATION
MTD1312
Device
Reel Size
Tape Width
Quantity
MTD1312
MTD1312T4
13
″
12 mm embossed tape
2500 units
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and HDTMOS1A are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 0
Order this document
by MTD1312/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1998
CASE 369A–13, Style 2
MTD1312
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 0.016 OHM
D
G
S
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